Infineon Technologies
AIMW120R035M1HXKSA1
SiC MOSFETs SIC_DISCRETE
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- SiC MOSFETs
- Series
- CoolSiC 1200V
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
18 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 52 A
- Rds On - Drain-Source Resistance
- 35 mOhms
- Vgs - Gate-Source Voltage
- - 7 V, + 23 V
- Vgs th - Gate-Source Threshold Voltage
- 4.5 V
- Qg - Gate Charge
- 59 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 228 W
- Channel Mode
- Enhancement
Show more parameters (6)
- Tradename
- CoolSiC
- Country of Assembly
- CN
- Country of Diffusion
- AT
- Country of Origin
- AT
- Technology
- SiC
- Part # Aliases
- AIMW120R035M1H SP005417579
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.