Toshiba
HN1C03FU-B,LF
Bipolar Transistors - BJT NPN + NPN Ind. Transistor, VCEO=20V, IC=0.3A, hFE=350 to 1200 in SOT-26 (SM6) package
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- HN1C03
- Package
- US-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 20 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 25 V
- Collector-Emitter Saturation Voltage
- 0.042 V
- Maximum DC Collector Current
- 300 mA
- Gain Bandwidth Product fT
- 30 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 1200
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 200
- Pd - Power Dissipation
- 200 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.