ON Semiconductor
SBC847BPDXV6T1G
Bipolar Transistors - BJT SS SOT563 GP XSTR PNP 40V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- BC847BPDXV6
- Package
- SOT-563-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- - 45 V, 45 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- -5 V, 6 V
- Collector-Emitter Saturation Voltage
- 250 mV
- Maximum DC Collector Current
- 15 nA
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 475
- Continuous Collector Current
- 100 mA
Show more parameters (4)
- DC Collector/Base Gain hfe Min
- 200
- Pd - Power Dissipation
- 357 mW, 500 mW
- Qualification
- AEC-Q101
- Unit Weight
- 0.000106 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.