MACOM
NPT2021
RF JFET Transistors DC-2.5GHz 45W Gain 16.5dB GaN HEMT
Basic Information
View Datasheet ↗- Manufacturer
- MACOM
- Product Category
- RF JFET Transistors
- Package
- TO-272
- Mounting Style
- Screw Mount
- Packaging
- Tray
Technical Specifications
17 parameters- Transistor Type
- HEMT
- Technology
- GaN Si
- Gain
- 14.2 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 160 V
- Vgs - Gate-Source Breakdown Voltage
- 3 V
- Id - Continuous Drain Current
- 14 mA
- Output Power
- 45 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Configuration
- Single
- Operating Frequency
- 2.5 GHz
Show more parameters (5)
- Operating Temperature Range
- - 40 C to + 85 C
- Moisture Sensitive
- Yes
- Rds On - Drain-Source Resistance
- 340 mOhms
- Vgs th - Gate-Source Threshold Voltage
- - 1.8 V
- Unit Weight
- 0.067412 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.