ON Semiconductor
2SB1124T-TD-E
Bipolar Transistors - BJT LOW-SATURATION VOLTAGE
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SB1124
- Package
- SOT-89-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 6 V
- Gain Bandwidth Product fT
- 150 MHz
- Maximum Operating Temperature
- + 150 C
- Height
- 1.5 mm
- Length
- 4.5 mm
- Width
- 2.5 mm
- Continuous Collector Current
- 3 A
- Pd - Power Dissipation
- 500 mW
Show more parameters (1)
- Unit Weight
- 0.004621 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.