Infineon Technologies
BGA7L1N6E6327XTSA1
RF Amplifier RF SILICON MMIC
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- RF Amplifier
- Package
- TSNP-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Type
- LNA for LTE
- Technology
- SiGe
- Operating Frequency
- 728 MHz to 960 MHz
- P1dB - Compression Point
- - 2 dBm
- Gain
- 13.3 dB
- Operating Supply Voltage
- 3.3 V
- NF - Noise Figure
- 0.9 dB
- Operating Supply Current
- 4.5 mA
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Input Return Loss
- 25 dB
- Isolation dB
- 25 dB
Show more parameters (2)
- Pd - Power Dissipation
- 60 mW
- Part # Aliases
- 7L1N6 BGA E6327 SP001109134
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.