STMicroelectronics
STT818B
Bipolar Transistors - BJT PNP Lo-Volt Hi-Gain
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- Bipolar Transistors - BJT
- Series
- STT818B
- Package
- SOT-23-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 30 V
- Collector- Base Voltage VCBO
- - 30 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- - 0.21 V
- Maximum DC Collector Current
- 3 A
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Height
- 1.3 mm
- Length
- 3.05 mm
- Width
- 1.75 mm
Show more parameters (3)
- Continuous Collector Current
- - 3 A
- Pd - Power Dissipation
- 1200 mW
- Unit Weight
- 0.000229 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.