Microchip / Microsemi
2N6301E3
Bipolar Transistors - BJT Power BJT
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip / Microsemi
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-66-2
- Mounting Style
- Through Hole
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 3 V
- Pd - Power Dissipation
- 75 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 200 C
- DC Current Gain hFE Max
- 18000
- Technology
- Si
- Continuous Collector Current
- 8 A
Show more parameters (1)
- DC Collector/Base Gain hfe Min
- 500
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.