Toshiba
TTC3710B,S4X
Bipolar Transistors - BJT Bipolar Transistors Silicn NPN Epitaxial
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 12 A
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 160 mV
- Pd - Power Dissipation
- 30 W
- Gain Bandwidth Product fT
- 80 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 15 A
Show more parameters (4)
- Country of Assembly
- CN
- Country of Diffusion
- JP
- Country of Origin
- JP
- DC Current Gain hFE Max
- 240 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.