Infineon Technologies
BFP 740ESD H6327
RF Bipolar Transistors RF BIP TRANSISTORS
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- RF Bipolar Transistors
- Series
- BFP740
- Package
- SOT343-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Transistor Type
- Bipolar
- Technology
- SiGe
- Collector- Emitter Voltage VCEO Max
- 4.2 V
- Continuous Collector Current
- 45 mA
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 400
- Operating Frequency
- 45 GHz
- Type
- RF Silicon Germanium
- Pd - Power Dissipation
- 160 mW
- Part # Aliases
- BFP740ESDH6327XTSA1 BFP74ESDH6327XT SP000785486
- Unit Weight
- 0.000212 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.