ON Semiconductor
SMMBT2222AWT1G
Bipolar Transistors - BJT SS GP XSTR NPN 40V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MMBT2222AW
- Package
- SC-70-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 75 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 1 V
- Maximum DC Collector Current
- 600 mA
- Gain Bandwidth Product fT
- 300 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 600 mA
Show more parameters (4)
- DC Collector/Base Gain hfe Min
- 35
- Pd - Power Dissipation
- 150 mW
- Qualification
- AEC-Q101
- Unit Weight
- 0.000219 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.