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Diodes Incorporated

ZXTC2061E6TA

Bipolar Transistors - BJT 12V 1A Medium Power TRANSISTOR

Basic Information

View Datasheet ↗
Manufacturer
Diodes Incorporated
Product Category
Bipolar Transistors - BJT
Series
ZXTC206
Package
SOT-26-6
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

16 parameters
Transistor Polarity
NPN, PNP
Configuration
Dual
Collector- Emitter Voltage VCEO Max
12 V
Collector- Base Voltage VCBO
12 V, 20 V
Emitter- Base Voltage VEBO
7 V
Maximum DC Collector Current
5 A
Gain Bandwidth Product fT
260 MHz, 310 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
500 at 10 mA, 2 V
Height
1.3 mm
Length
3.1 mm
Show more parameters (4)
Width
1.8 mm
DC Collector/Base Gain hfe Min
500 at 10 mA, 2 V at NPN, 480 at 1 A, 2 V at NPN, 260 at 5 A, 2 V at NPN, 500 at 10 mA, 2 V at PNP, 290 at 1 A, 2 V at PNP, 75 at 3.5 A, 2 V at PNP
Pd - Power Dissipation
1700 mW
Unit Weight
0.000282 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

ZXTC2061E6TA Specifications and Datasheet | ChipSourceHub