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Toshiba

RN2103MFV(TPL3)

Bipolar Transistors - Pre-Biased -50V -100mA 22x22Kohms

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
Bipolar Transistors - Pre-Biased
Series
RN2103MF
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Not compliant (source record)

Technical Specifications

11 parameters
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
22 kOhms
Typical Resistor Ratio
1
DC Collector/Base Gain hfe Min
70
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
- 100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
70

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

RN2103MFV(TPL3) Specifications and Datasheet | ChipSourceHub