Central Semiconductor
2SC1815
Bipolar Transistors - BJT 60Vcbo 50Vceo 5.0V 150mA 400mA 400mW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SC1815
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.25 V
- Gain Bandwidth Product fT
- 80 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 125 C
- DC Current Gain hFE Max
- 700
- Continuous Collector Current
- 150 mA
- DC Collector/Base Gain hfe Min
- 70
Show more parameters (2)
- Pd - Power Dissipation
- 400 mW
- Part # Aliases
- 2SC1815 PBFREE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.