Infineon Technologies
BSM50GB120DLC
IGBT Modules 1200V 50A DUAL
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- IGBT Modules
- Package
- 32 mm
- Mounting Style
- Chassis Mount
- Packaging
- Tray
- RoHS
- Not compliant (source record)
Technical Specifications
16 parameters- Product
- IGBT Silicon Modules
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 2.4 V
- Continuous Collector Current at 25 C
- 115 A
- Gate-Emitter Leakage Current
- 400 nA
- Pd - Power Dissipation
- 460 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 125 C
- Height
- 30.5 mm
- Length
- 94 mm
- Technology
- Si
Show more parameters (4)
- Width
- 34 mm
- Maximum Gate Emitter Voltage
- 20 V
- Part # Aliases
- BSM50GB120DLCHOSA1 SP000100474
- Unit Weight
- 6.349313 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.