NXP Semiconductors
AFM907NT1
RF MOSFET Transistors RF Power
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Package
- DFN-16
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 3 A
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Gain
- 15 dB
- Output Power
- 8 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Operating Frequency
- 136 MHz to 941 MHz
- Type
- RF Power MOSFET
- Forward Transconductance - Min
- 9.8 S
- Number of Channels
- 1 Channel
Show more parameters (6)
- Moisture Sensitive
- Yes
- Pd - Power Dissipation
- 65.7 W
- Vgs - Gate-Source Voltage
- - 6 V , 12 V
- Vgs th - Gate-Source Threshold Voltage
- 1.6 V
- Part # Aliases
- 935346918515
- Unit Weight
- 0 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.