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ROHM Semiconductor

IMD3AT108

Bipolar Transistors - Pre-Biased DUAL DIGITAL PNP/NPN

Basic Information

View Datasheet ↗
Manufacturer
ROHM Semiconductor
Product Category
Bipolar Transistors - Pre-Biased
Series
IMD3A
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

17 parameters
Configuration
Dual
Transistor Polarity
NPN, PNP
Typical Input Resistor
10 kOhms
Typical Resistor Ratio
1
DC Collector/Base Gain hfe Min
30
Continuous Collector Current
50 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
300 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
30
Height
1.1 mm
Show more parameters (5)
Length
2.9 mm
Width
1.6 mm
Number of Channels
2 Channel
Part # Aliases
IMD3A
Unit Weight
0.001235 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

IMD3AT108 Specifications and Datasheet | ChipSourceHub