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ON Semiconductor

NSVMMUN2136LT1G

Bipolar Transistors - BJT SS SOT23 PNP DIGITA L TRAN

Basic Information

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Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - BJT
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

12 parameters
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
50 V
Collector- Base Voltage VCBO
50 V
Emitter- Base Voltage VEBO
6 V
Collector-Emitter Saturation Voltage
0.25 V
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
100 mA
DC Collector/Base Gain hfe Min
80
Pd - Power Dissipation
246 mW
Qualification
AEC-Q101

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NSVMMUN2136LT1G Specifications and Datasheet | ChipSourceHub