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Vishay / Siliconix

SIHG40N60E-GE3

MOSFET 600V Vds 30V Vgs TO-247AC

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay / Siliconix
Product Category
MOSFET
Series
E
Package
TO-247AC-3
Mounting Style
Through Hole
Packaging
Tube
RoHS
Compliant (source record)

Technical Specifications

19 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
600 V
Id - Continuous Drain Current
40 A
Rds On - Drain-Source Resistance
65 mOhms
Vgs th - Gate-Source Threshold Voltage
4 V
Vgs - Gate-Source Voltage
30 V
Qg - Gate Charge
131 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
329 W
Show more parameters (7)
Configuration
Single
Channel Mode
Enhancement
Fall Time
66 ns
Rise Time
71 ns
Typical Turn-Off Delay Time
127 ns
Typical Turn-On Delay Time
35 ns
Unit Weight
0.211644 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SIHG40N60E-GE3 Specifications and Datasheet | ChipSourceHub