ON Semiconductor
2SC3649S-TD-H
Bipolar Transistors - BJT BIP NPN 1.5A 160V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SC3649
- Mounting Style
- Through Hole
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
6 parameters- Transistor Polarity
- NPN
- Collector- Emitter Voltage VCEO Max
- 160 V
- Emitter- Base Voltage VEBO
- - 6 V
- Continuous Collector Current
- 1.5 A
- Pd - Power Dissipation
- 500 mW
- Unit Weight
- 0.001973 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.