Toshiba
RN1313,LF
Bipolar Transistors - Pre-Biased BRT 0.1A 50V
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- RN1313
- Package
- SOT-323-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Configuration
- Single
- Transistor Polarity
- NPN
- Typical Input Resistor
- 47 kOhms
- DC Collector/Base Gain hfe Min
- 120
- Maximum Operating Frequency
- 250 MHz
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- 100 mA
- Peak DC Collector Current
- 100 mA
- Pd - Power Dissipation
- 150 mW
- Maximum Operating Temperature
- + 125 C
- Emitter- Base Voltage VEBO
- 5 V
- Channel Mode
- Enhancement
Show more parameters (2)
- Maximum DC Collector Current
- 100 mA
- Unit Weight
- 0.000212 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.