ROHM Semiconductor
2SCR587D3TL1
Bipolar Transistors - BJT NPN, TO-252 (DPAK), 120V 3A, Power Transistor
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 3 A
- Collector- Emitter Voltage VCEO Max
- 120 V
- Collector- Base Voltage VCBO
- 120 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 120 mV
- Pd - Power Dissipation
- 10 W
- Gain Bandwidth Product fT
- 250 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 3 A
Show more parameters (4)
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 120 at 100 mA, 5 V
- DC Current Gain hFE Max
- 390 at 100 mA, 5 V
- Part # Aliases
- 2SCR587D3
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.