ChipSourceHub

onsemi

NJVMJD45H11T4G

Bipolar Transistors - BJT BIP DPAK PNP 8A 80V TR

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
Bipolar Transistors - BJT
Series
MJD45H11
Package
DPAK-3 (TO-252-3)
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

16 parameters
Technology
Si
Transistor Polarity
PNP
Configuration
Single
Maximum DC Collector Current
8 A
Collector- Emitter Voltage VCEO Max
80 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
1 V
Pd - Power Dissipation
20 W
Gain Bandwidth Product fT
90 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Qualification
AEC-Q100
Show more parameters (4)
Continuous Collector Current
8 A
Country of Origin
VN
DC Collector/Base Gain hfe Min
60
Unit Weight
0.009185 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NJVMJD45H11T4G Specifications and Datasheet | ChipSourceHub