Advanced Semiconductor, Inc.
BLV11
RF Bipolar Transistors RF Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Advanced Semiconductor, Inc.
- Product Category
- RF Bipolar Transistors
- Package
- SOT-123
- Mounting Style
- Screw Mount
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Type
- Bipolar Power
- Technology
- Si
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 10
- Collector- Emitter Voltage VCEO Max
- 18 V
- Emitter- Base Voltage VEBO
- 4 V
- Continuous Collector Current
- 3 A
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Operating Frequency
- 250 MHz
- Type
- RF Bipolar Power
- Maximum DC Collector Current
- 8 A
Show more parameters (1)
- Pd - Power Dissipation
- 36 W
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.