ROHM Semiconductor
MMST3906T146
Bipolar Transistors - BJT GP PNP 40V 200MA
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MMST3906
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 40 V
- Collector- Base Voltage VCBO
- - 40 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- - 0.4 V
- Maximum DC Collector Current
- 0.2 A
- Gain Bandwidth Product fT
- 250 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 300
- Height
- 1.1 mm
Show more parameters (6)
- Length
- 2.9 mm
- Width
- 1.6 mm
- Continuous Collector Current
- - 0.2 A
- DC Collector/Base Gain hfe Min
- 30
- Pd - Power Dissipation
- 6.2 W
- Part # Aliases
- MMST3906
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.