Microchip Technology
MSC080SMA120B4
SiC MOSFETs MOSFET SIC 1200 V 80 mOhm TO-247-4
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- SiC MOSFETs
- Package
- TO-247-4
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
15 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 37 A
- Rds On - Drain-Source Resistance
- 80 mOhms
- Vgs - Gate-Source Voltage
- - 10 V, + 23 V
- Vgs th - Gate-Source Threshold Voltage
- 2.8 V
- Qg - Gate Charge
- 64 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 200 W
- Channel Mode
- Enhancement
Show more parameters (3)
- Country of Origin
- PH
- Technology
- SiC
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.