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Nexperia

PBSS9110T,215

Bipolar Transistors - BJT TRANS BISS TAPE-7

Basic Information

View Datasheet ↗
Manufacturer
Nexperia
Product Category
Bipolar Transistors - BJT
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
50 V
RoHS
Compliant (source record)

Technical Specifications

19 parameters
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 100 V
Collector- Base Voltage VCBO
120 V
Emitter- Base Voltage VEBO
- 5 V
Maximum DC Collector Current
- 3 A
Gain Bandwidth Product fT
100 MHz
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
150 at 1 mA, 5 V
Height
1 mm
Length
3 mm
Show more parameters (7)
Width
1.4 mm
Continuous Collector Current
- 1 A
DC Collector/Base Gain hfe Min
150
Pd - Power Dissipation
300 mW
Qualification
AEC-Q101
Part # Aliases
PBSS9110T T/R
Unit Weight
0.000282 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

PBSS9110T,215 Specifications and Datasheet | ChipSourceHub