ON Semiconductor
2SA2222SG
Bipolar Transistors - BJT BIP PNP 10A 50V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SA2222SG
- Package
- TO-220F-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 50 V
- Collector- Base Voltage VCBO
- - 50 V
- Emitter- Base Voltage VEBO
- - 6 V
- Collector-Emitter Saturation Voltage
- - 250 mV
- Maximum DC Collector Current
- - 10 A
- Gain Bandwidth Product fT
- 230 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 450
- Continuous Collector Current
- - 10 A
- DC Collector/Base Gain hfe Min
- 150
Show more parameters (2)
- Pd - Power Dissipation
- 25 W
- Unit Weight
- 0.010582 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.