Toshiba
2SA2120-O(Q)
Bipolar Transistors - BJT Transistor PNP 200V 12A
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SA2120
- Package
- TO-3P-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 200 V
- Collector- Base Voltage VCBO
- 200 V
- Emitter- Base Voltage VEBO
- 5 V
- Maximum DC Collector Current
- 12 A
- Gain Bandwidth Product fT
- 25 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Height
- 19 mm
- Length
- 15.9 mm
- Width
- 4.8 mm
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 80 at 1 A, 5 V
- Pd - Power Dissipation
- 200000 mW
- Unit Weight
- 0.238311 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.