Infineon Technologies
BFP 650 H6327
RF Bipolar Transistors RF BIP TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- RF Bipolar Transistors
- Series
- BFP650
- Package
- SOT-343
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
10 parameters- Transistor Type
- Bipolar
- Technology
- SiGe
- Collector- Emitter Voltage VCEO Max
- 4 V
- Emitter- Base Voltage VEBO
- 1.2 V
- Continuous Collector Current
- 150 mA
- Operating Frequency
- 37 GHz
- Type
- RF Silicon Germanium
- Pd - Power Dissipation
- 500 mW (1/2 W)
- Part # Aliases
- BFP650H6327XTSA1 BFP65H6327XT SP000750406
- Unit Weight
- 0.001093 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.