NXP Semiconductors
MRF6V2010NR1
RF MOSFET Transistors VHV6 10W TO270-2N
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Package
- TO-270
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- E
Technical Specifications
19 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Vds - Drain-Source Breakdown Voltage
- 110 V
- Gain
- 23.9 dB
- Output Power
- 10 W
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Height
- 2.08 mm
- Length
- 9.7 mm
- Operating Frequency
- 450 MHz
- Type
- RF Power MOSFET
Show more parameters (7)
- Width
- 6.15 mm
- Channel Mode
- Enhancement
- Moisture Sensitive
- Yes
- Vgs - Gate-Source Voltage
- - 5 V, 10 V
- Vgs th - Gate-Source Threshold Voltage
- 1.68 V
- Part # Aliases
- 935309669528
- Unit Weight
- 0.018679 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.