ROHM Semiconductor
DTC114EEFRATL
Bipolar Transistors - Pre-Biased Trans Digital BJT NPN 100mA
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- DTC114EE
- Package
- EMT-3F-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Configuration
- Single
- Transistor Polarity
- NPN
- Typical Input Resistor
- 10 kOhms
- Typical Resistor Ratio
- 1
- DC Collector/Base Gain hfe Min
- 30
- Maximum Operating Frequency
- 250 MHz
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- 100 mA
- Peak DC Collector Current
- 100 mA
- Pd - Power Dissipation
- 150 mW
- Maximum Operating Temperature
- + 150 C
- Output Voltage
- 100 mV
Show more parameters (4)
- Channel Mode
- Enhancement
- Maximum DC Collector Current
- 100 mA
- Qualification
- AEC-Q101
- Part # Aliases
- DTC114EEFRA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.