Renesas Electronics
RBA250N04AHPF-4UA01#GB0
MOSFETs Nch Power MOSFET 40V 250A 0.85mohm TO-263-7 / D2PAK-7
Basic Information
View Datasheet ↗- Manufacturer
- Renesas Electronics
- Product Category
- MOSFETs
- Package
- TO-263-7
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
19 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 40 V
- Id - Continuous Drain Current
- 250 A
- Rds On - Drain-Source Resistance
- 850 uOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Qg - Gate Charge
- 245 nC
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 348 W
- Channel Mode
- Enhancement
Show more parameters (7)
- Configuration
- Single
- Country of Origin
- MY
- Fall Time
- 26 ns
- Rise Time
- 20 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 148 ns
- Typical Turn-On Delay Time
- 45 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.