Diodes Incorporated
ZTX788BSTZ
Bipolar Transistors - BJT PNP 15V HIGH GAIN
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- ZTX788
- Package
- E-Line-3
- Mounting Style
- Through Hole
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 15 V
- Collector- Base Voltage VCBO
- 15 V
- Emitter- Base Voltage VEBO
- 5 V
- Maximum DC Collector Current
- 3 A
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 500 at 10 mA, 2 V
- Height
- 4.01 mm
- Length
- 4.77 mm
Show more parameters (3)
- Width
- 2.41 mm
- DC Collector/Base Gain hfe Min
- 500 at 10 mA, 2 V, 400 at 1 A, 2 V, 300 at 2 A, 2 V, 150 at 6 A, 2 V
- Pd - Power Dissipation
- 1000 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.