Vishay Semiconductors
SUM50010E-GE3
MOSFETs 60V Vds; 20V Vgs TO-263
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay Semiconductors
- Product Category
- MOSFETs
- Package
- D2PAK-3 (TO-263-3)
- Mounting Style
- SMD/SMT
- Packaging
- Tube
Technical Specifications
22 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Id - Continuous Drain Current
- 150 A
- Rds On - Drain-Source Resistance
- 1.75 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2 V
- Qg - Gate Charge
- 212 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 375 W
Show more parameters (10)
- Channel Mode
- Enhancement
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 13 ns
- Forward Transconductance - Min
- 120 S
- Rise Time
- 12 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 50 ns
- Typical Turn-On Delay Time
- 28 ns
- Unit Weight
- 0.139332 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.