onsemi
FJL6920TU
Bipolar Transistors - BJT NPN Si Transistor Tripple Diff Planar
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- FJL6920
- Package
- TO-264-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 20 A
- Collector- Emitter Voltage VCEO Max
- 800 V
- Collector- Base Voltage VCBO
- 1.7 kV
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 3 V
- Pd - Power Dissipation
- 200 W
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 20 A
- Country of Origin
- CN
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 55
- DC Current Gain hFE Max
- 85
- Unit Weight
- 0.238311 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.