ON Semiconductor
2SC5551AE-TD-E
Bipolar Transistors - BJT RF Transistors 30V,300mA,fT=3.5GHz
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SC5551A
- Package
- PCP-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 2 V
- Collector-Emitter Saturation Voltage
- 0.3 V
- Maximum DC Collector Current
- 300 mA
- Gain Bandwidth Product fT
- 3.5 GHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 270
- Continuous Collector Current
- 300 mA
- Pd - Power Dissipation
- 1.3 W
Show more parameters (1)
- Unit Weight
- 0.001804 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.