Nexperia
PEMZ7,315
Bipolar Transistors - BJT 12V 300mW NPN/PNP gen purpose transist
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-666-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 12 V
- Collector- Base Voltage VCBO
- 15 V
- Emitter- Base Voltage VEBO
- 6 V
- Maximum DC Collector Current
- 1 A
- Gain Bandwidth Product fT
- 420 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Height
- 0.6 mm
- Length
- 1.7 mm
- Width
- 1.3 mm
Show more parameters (5)
- Continuous Collector Current
- 500 mA
- DC Collector/Base Gain hfe Min
- 200
- Pd - Power Dissipation
- 200 mW
- Qualification
- AEC-Q101
- Unit Weight
- 0.000099 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.