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NXP Semiconductors

MRF6V3090NBR1

RF MOSFET Transistors VHV6 860MHz 90W TO 272WB4

Basic Information

View Datasheet ↗
Manufacturer
NXP
Brand
NXP Semiconductors
Product Category
RF MOSFET Transistors
Series
MRF6V3090N
Package
TO-270-4
Mounting Style
SMD/SMT
Packaging
Reel
RoHS
E

Technical Specifications

14 parameters
Transistor Polarity
N-Channel
Technology
Si
Vds - Drain-Source Breakdown Voltage
115 V
Gain
22 dB
Output Power
18 W
Maximum Operating Temperature
+ 150 C
Configuration
Single
Operating Frequency
0.47 GHz to 0.86 GHz
Type
RF Power MOSFET
Moisture Sensitive
Yes
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
2.4 V
Show more parameters (2)
Part # Aliases
935310252528
Unit Weight
0.067412 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MRF6V3090NBR1 Specifications and Datasheet | ChipSourceHub