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Toshiba

RN2310(TE85L,F)

Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7Kohms

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
Bipolar Transistors - Pre-Biased
Series
RN2310
Package
SC-70
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

14 parameters
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
4.7 kOhms
DC Collector/Base Gain hfe Min
120
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
- 100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
100 mW
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
400
Height
0.9 mm
Length
2 mm
Show more parameters (2)
Width
1.25 mm
Unit Weight
0.000988 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

RN2310(TE85L,F) Specifications and Datasheet | ChipSourceHub