ON Semiconductor
NJVMJD41CT4G
Bipolar Transistors - BJT BIP NPN 6A 100V TR
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MJD41C
- Package
- TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Gain Bandwidth Product fT
- 3 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 75
- Continuous Collector Current
- 6 A
Show more parameters (5)
- DC Collector/Base Gain hfe Min
- 15
- Pd - Power Dissipation
- 1.75 W
- Qualification
- AEC-Q101
- Part # Aliases
- NJVMJD41CT4G-VF01
- Unit Weight
- 0.011993 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.