ROHM Semiconductor
MMST5088T146
Bipolar Transistors - BJT SMT NPN
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MMST5088
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 35 V
- Emitter- Base Voltage VEBO
- 4.5 V
- Collector-Emitter Saturation Voltage
- 300 mV
- Maximum DC Collector Current
- 200 mA
- Gain Bandwidth Product fT
- 50 MHz
- DC Current Gain hFE Max
- 900 at 100 uA, 5 V
- Continuous Collector Current
- 200 mA
- DC Collector/Base Gain hfe Min
- 350 at 1 mA, 5 V
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.