ROHM Semiconductor
2SCR582D3TL1
Bipolar Transistors - BJT NPN, TO-252 (DPAK), 30V 10A, Power Transistor
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 30 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 350 mV
- Pd - Power Dissipation
- 10 W
- Gain Bandwidth Product fT
- 250 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 10 A
- Country of Origin
- CN
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 200 at 1 A, 3 V
- DC Current Gain hFE Max
- 500 at 1 A, 3 V
- Part # Aliases
- 2SCR582D3
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.