Vishay / Siliconix
IRFP250PBF
MOSFET N-CH 200V HEXFET MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFET
- Series
- IRFP
- Package
- TO-247AC-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- E
Technical Specifications
24 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 200 V
- Id - Continuous Drain Current
- 30 A
- Rds On - Drain-Source Resistance
- 85 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 140 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 190 W
Show more parameters (12)
- Configuration
- Single
- Channel Mode
- Enhancement
- Height
- 20.82 mm
- Length
- 15.87 mm
- Transistor Type
- 1 N-Channel
- Width
- 5.31 mm
- Forward Transconductance - Min
- 12 S
- Fall Time
- 62 ns
- Rise Time
- 86 ns
- Typical Turn-Off Delay Time
- 70 ns
- Typical Turn-On Delay Time
- 16 ns
- Unit Weight
- 1.340411 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.