Diodes Incorporated
DXTP5860CFDB-7
Bipolar Transistors - BJT Pwr Low Sat Transistor U-DFN2020-3 T&R 3K
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Package
- U-DFN2020-3
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 4 A
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 155 mV
- Pd - Power Dissipation
- 690 mW
- Gain Bandwidth Product fT
- 130 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (5)
- Continuous Collector Current
- - 4 A
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 140 at - 2 A, - 2 V
- DC Current Gain hFE Max
- 180 at - 2 A, - 2 V
- Unit Weight
- 0.000353 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.