Central Semiconductor
2N3495
Bipolar Transistors - BJT 120Vcbo 120Vceo 4.5Vebo 100mA 0.6W
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N3495
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 120 V
- Collector- Base Voltage VCBO
- 120 V
- Emitter- Base Voltage VEBO
- 4.5 V
- Collector-Emitter Saturation Voltage
- 0.35 V
- Gain Bandwidth Product fT
- 150 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Continuous Collector Current
- 100 mA
- DC Collector/Base Gain hfe Min
- 35 at 100 uA, 10 V
Show more parameters (2)
- Pd - Power Dissipation
- 3 W
- Part # Aliases
- 2N3495 PBFREE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.