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Microchip / Microsemi

JANTX2N4261UB/TR

Bipolar Transistors - BJT BJTs

Basic Information

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Manufacturer
Microchip
Brand
Microchip / Microsemi
Product Category
Bipolar Transistors - BJT
Package
SMD-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Not compliant (source record)

Technical Specifications

13 parameters
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 15 V
Collector- Base Voltage VCBO
- 15 V
Emitter- Base Voltage VEBO
- 4.5 V
Collector-Emitter Saturation Voltage
- 0.35 V
Pd - Power Dissipation
0.2 W
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 200 C
DC Current Gain hFE Max
150
Technology
Si
Continuous Collector Current
- 30 mA
Show more parameters (1)
DC Collector/Base Gain hfe Min
25

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

JANTX2N4261UB/TR Specifications and Datasheet | ChipSourceHub