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Toshiba

2SC3324GRTE85LF

Bipolar Transistors - BJT Audio Freq Low Audio Freq Low

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
Bipolar Transistors - BJT
Series
2SC3324
Package
SOT-346-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

11 parameters
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
120 V
Collector- Base Voltage VCBO
120 V
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
100 MHz
DC Current Gain hFE Max
700
Continuous Collector Current
100 mA
DC Collector/Base Gain hfe Min
200
Pd - Power Dissipation
150 mW
Unit Weight
0.000423 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

2SC3324GRTE85LF Specifications and Datasheet | ChipSourceHub