ROHM Semiconductor
2SCR574D3TL1
Bipolar Transistors - BJT NPN 80V 2A 10W Pwr trnstr Low VCE
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-252
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 100 mV
- Maximum DC Collector Current
- 2 A
- Pd - Power Dissipation
- 10 W
- Gain Bandwidth Product fT
- 280 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 390
- Technology
- Si
Show more parameters (3)
- Continuous Collector Current
- 2 A
- DC Collector/Base Gain hfe Min
- 120
- Part # Aliases
- 2SCR574D3
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.