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Mitsubishi Electric

PM200DV1A120

IGBT Modules IPM MODULE V1-SERIES

Basic Information

View Datasheet ↗
Manufacturer
Mitsubishi Electric
Product Category
IGBT Modules

Technical Specifications

10 parameters
Product
IGBT Silicon Modules
Configuration
Dual
Collector- Emitter Voltage VCEO Max
1.2 kV
Collector-Emitter Saturation Voltage
1.65 V
Continuous Collector Current at 25 C
200 A
Pd - Power Dissipation
1.388 kW
Minimum Operating Temperature
- 20 C
Maximum Operating Temperature
+ 150 C
Country of Origin
JP
Technology
Si

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

PM200DV1A120 Specifications and Datasheet | ChipSourceHub